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ipd30n10s3l34atma1 Infineon OptiMOS-T Type N-Channel MOSFET, 30 A, 100 V Enhancement, 3-Pin TO-252 IPD30N10S3L34ATMA1
ipd30n10s3l34atma1 Infineon OptiMOS-T Type N-Channel MOSFET, 30 A, 100 V Enhancement, 3-Pin TO-252 IPD30N10S3L34ATMA1
ipd30n10s3l34atma1 Infineon OptiMOS-T Type N-Channel MOSFET, 30 A, 100 V Enhancement, 3-Pin TO-252 IPD30N10S3L34ATMA1

Infineon OptiMOS-T Type N-Channel MOSFET, 30 A, 100 V Enhancement, 3-Pin TO-252 IPD30N10S3L34ATMA1

Infineon OptiMOS-T Type N-Channel MOSFET, 30 A, 100 V Enhancement, 3-Pin TO-252 IPD30N10S3L34ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD30N10S3L34ATMA1
Enrgtech Part No:
ET100037201
Warranty:
Manufacturer
$ 0.99 $ 0.99
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-252
Series:
https://www.traceparts.com/els/rs-components/en/api/viewer/3d?SupplierID=RS_COMPONENTS&PartNumber=2339418&DisplayLogo=False
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
https://www.traceparts.com/els/rs-components/en/api/viewer/3d?SupplierID=RS_COMPONENTS&PartNumber=2339419&DisplayLogo=False
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
24nC
Forward Voltage Vf:
1.2V
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
57W
Maximum Operating Temperature:
175°C
Height:
2.3mm
Standards/Approvals:
No
Length:
6.5mm
Width:
6.22 mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b8107423c.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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