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siss27dn-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3
siss27dn-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SISS27DN-T1-GE3
Enrgtech Part No:
ET10002941
Warranty:
Manufacturer
$ 0.69 $ 0.69
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
23A
Maximum Drain Source Voltage Vds:
30V
Package Type:
PowerPAK 1212
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
9mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
92nC
Maximum Power Dissipation Pd:
57W
Forward Voltage Vf:
-1.2V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
3.3mm
Height:
0.78mm
Width:
3.3 mm
Automotive Standard:
No
pdf icon
0900766b813011f3.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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