ROHM Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 R6509END3TL1

Manufacturer:

ROHM

Manufacturer Part No:

R6509END3TL1

Enrgtech Part No:

ET100027413

Warranty:

Manufacturer

$ 3.22

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

Maximum Drain Source Voltage Vds:

650V

Package Type:

TO-252

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

585mΩ

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Gate Source Voltage Vgs:

20 V

Maximum Power Dissipation Pd:

94W

A700000008359773.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

ROHM Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 R6509END3TL1

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