Diodes Inc N-Channel MOSFET, 1.9 A, 100 V, 6-Pin SOT-23 ZXMN10A08E6TA

DiodesZetex ZXMN10A08E6TA Diodes Inc N-Channel MOSFET, 1.9 A, 100 V, 6-Pin SOT-23 ZXMN10A08E6TA

Manufacturer:
Manufacturer Part No:
ZXMN10A08E6TA
Enrgtech Part No:
ET10001506
Warranty:
Manufacturer
$ 0.40 $ 0.40
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Channel Type:
N
Maximum Continuous Drain Current:
1.9 A
Maximum Drain Source Voltage:
100 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
300 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Maximum Power Dissipation:
1.7 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Typical Gate Charge @ Vgs:
4.2 nC @ 5 V
Width:
1.75mm
Maximum Operating Temperature:
+150 °C
Length:
3mm
Transistor Material:
Si
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Height:
1.3mm
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0900766b80e5616e.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
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A700000009706374.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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