Infineon BFP196WNH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 12 V, 4-Pin SOT-343

Infineon BFP196WNH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 12 V, 4-Pin SOT-343

Manufacturer:

Manufacturer Part No:

BFP196WNH6327XTSA1

Enrgtech Part No:

ET100866516

Warranty:

Manufacturer

$ 0.11

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Product Type:

RF Bipolar Transistor

Maximum DC Collector Current Idc:

150mA

Maximum Collector Emitter Voltage Vceo:

12V

Package Type:

SOT-343

Mount Type:

Surface

Transistor Configuration:

Npn Silicon Planar Epitaxial Transistor

Maximum Collector Base Voltage VCBO:

20V

Maximum Power Dissipation Pd:

700mW

Maximum Transition Frequency ft:

7.5GHz

Minimum Operating Temperature:

-55°C

Maximum Emitter Base Voltage VEBO:

Minimum DC Current Gain hFE:

A700000007468804.pdf(datasheets)